Temperature-sensitive mechanism for silicon blocked-impurity-band photodetectors

Benefit from high quantum efficiency and low dark current, blocked-impurity-band (BIB) detectors have been the state-of-the-art choice in astronomy science. The temperature extrinsic-response-reduction mechanism BIB is vague for lack of pertinent research. We fabricated Si:P with a remarkable blackbody detectivity 2 × 1012 cm · Hz1/2/W at 4 K, V (blackbody 800 K). Both varying optoelectronic characterization calculated results overturn common standpoint that focuses on ionization proportion. Instead, solid evidence indicates increase negative charge density according to significantly influences width depletion region until it totally vanishes beyond 20 K. enriches design thoughts detector improving its performance.